? 2015 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 650 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 650 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c52a i dm t c = 25 ? c, pulse width limited by t jm 104 a p d t c = 25 ? c 660 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6 g ds100604d(6/15) x-class power mosfet n-channel enhancement mode IXTH52N65X v dss = 650v i d25 = 52a r ds(on) ? ? ? ? ? 68m ? ? ? ? ? features ? international standard package ? low r ds(on) and q g ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 650 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 100 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 68 m ? g = gate d = drain s = source tab = drain to-247 (ixth) g s tab d
i xys reserves the right to change limits, test conditions, and dimensions. IXTH52N65X note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 52 a i sm repetitive, pulse width limited by t jm 208 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 435 ns q rm 9.8 ????????????? c i rm 46 a i f = 26a, -di/dt = 100a/ s v r = 100v to-247 outline 1 - gate 2,4 - drain 3 - source e d1 e1 d2 a1 l1 p1 c b a b b2 b4 r d l e s a d c q 1 2 3 4 a2 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 25 42 s r gi gate input resistance 1.1 ? c iss 4350 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 3300 pf c rss 120 pf c o(er) 204 pf c o(tr) 673 pf t d(on) 26 ns t r 57 ns t d(off) 63 ns t f 16 ns q g(on) 113 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 nc q gd 57 nc r thjc 0.19 ? c/w r thcs 0.21 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2015 ixys corporation, all rights reserved IXTH52N65X fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 00.511.522.533.54 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 0123456789 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 26a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 52a i d = 26a fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 5. r ds(on) normalized to i d = 26a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 140 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
i xys reserves the right to change limits, test conditions, and dimensions. IXTH52N65X fig. 8. input admittance 0 10 20 30 40 50 60 70 80 3.54.04.55.05.56.06.57.07.58.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 7. maximum drain current vs. case temperature 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 10 20 30 40 50 60 70 80 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 10. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 11. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = 325v i d = 26a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2015 ixys corporation, all rights reserved ixys ref: t_52n65x(i8-r4t4) 6-17-15-a IXTH52N65X fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 14. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit 100ms dc 10ms fig. 13. output capacitance stored energy 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 600 v ds - volts e oss - microjoules
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